MRF8P8300HR6 Freescale Semiconductor, MRF8P8300HR6 Datasheet - Page 7

• Manufacturer Part Number: MRF8P8300HR6
• Description: RF MOSFET Power HV8-800 28V NI1230H
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P8300HR6

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
1
Figure 9. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
3
PEAK--TO--AVERAGE (dB)
Input Signal
4
5
23
22
21
20
19
18
17
24
20
16
12
Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain
8
4
0
580
1
790 MHz
V
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
6
DD
Efficiency and ACPR versus Output Power
Figure 8. Broadband Frequency Response
= 28 Vdc, I
640
7
TYPICAL CHARACTERISTICS
V
P
I
DQ
805 MHz
W- -CDMA TEST SIGNAL
P
700
DD
in
out
8
DQ
= 0 dBm
= 2000 mA
= 28 Vdc
, OUTPUT POWER (WATTS) AVG.
= 2000 mA, Single--Carrier
f, FREQUENCY (MHz)
9
760
10
820 MHz
Gain
G
10
IRL
ps
820
790 MHz
880
--100
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
0
805 MHz
--9
820 MHz
940
805 MHz
Figure 10. Single- -Carrier W- -CDMA Spectrum
820 MHz
100
--ACPR in 3.84 MHz
790 MHz
--7.2
Integrated BW
1000
--5.4
ACPR
η
D
1060
--3.6
400
10
5
0
--5
--10
--15
--20
66
55
44
33
22
11
0
MRF8P8300HR6 MRF8P8300HSR6
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
5.4
7.2
9
7