BFG67 T/R NXP Semiconductors, BFG67 T/R Datasheet - Page 14

• Manufacturer Part Number: BFG67 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG67 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG67,215

NXP Semiconductors
Revision history
Table 1.
Document ID
BFG67_X_XR_N_5
Modifications:
BFG67_X_XR_4
(9397 750 04349)
BFG67_SERIES_3
BFG67_SERIES_2
BFG67_SERIES_1
Revision history
Release date
20071123
19981002
19950901
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Page 2; Table Marking code; row 1 and 2 code changed
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
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BFG67; BFG67/X; BFG67/XR
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
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NPN 8 GHz wideband transistors
Document identifier: BFG67_X_XR_N_5
Supersedes
BFG67_X_XR_4
BFG67_SERIES_3
BFG67_SERIES_2
BFG67_SERIES_1
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Date of release: 23 November 2007
All rights reserved.