BFG67 T/R NXP Semiconductors, BFG67 T/R Datasheet - Page 8

• Manufacturer Part Number: BFG67 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG67 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG67,215

NXP Semiconductors
BFG67/X
Noise Parameters
BFG67/X
Noise Parameters
Average Gain Parameters
1000
1.3
2000
2.2
12
F
(dB)
F
(dB)
NPN 8 GHz wideband transistors
(MHz)
(MHz)
G
min
min
(dB)
MAX
f
f
0.375
0.391
(mag)
(mag)
Gamma (opt)
Gamma (opt)
8
8
0.839
(mag)
V
V
(V)
(V)
Gamma (max)
CE
CE
65.9
136.5
(ang)
(ang)
5
5
170
(ang)
(mA)
(mA)
0.304
0.184
R
R
I
I
C
C
n
n
/50
/50
Z
Z
O
O
= 50 .
= 50 .
Rev. 05 - 23 November 2007
+ j
– j
j
j
0
0
0.2
0.2
0.2
0.2
G max
12dB
0.5
0.5
0.2
0.5
0.5
0.2
11 dB
stability
Fig.14 Noise circle figure.
Fig.15 Noise circle figure.
circle
4 dB
F min 2.2 dB
0.5
OPT
0.5
10 dB
3 dB
BFG67; BFG67/X; BFG67/XR
9 dB
8 dB
2 dB
F min
1
1
1
1
1
1
OPT
=1.3 dB
3 dB
2
2
4 dB
5 dB
2
2
5
2
2
5
Product specification
10
10
MBB316
MBB315
5
5
5
5
10
10
10
10
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