BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 3
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BLT81 T/R
Manufacturer Part Number
BLT81 T/R
Description
RF Bipolar Power NPN 6-7.5V 500mA UHF
Manufacturer
NXP Semiconductors
Datasheet
1.BLT81115.pdf
(12 pages)
Specifications of BLT81 T/R
Dc Collector/base Gain Hfe Min
25
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
9.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.5 A
Power Dissipation
2000 mW
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLT81,115
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
1996 May 09
handbook, halfpage
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
stg
j
CBO
CEO
EBO
tot
th j-s
UHF power transistor
T
s
s
= 110 C.
10
(A)
I C
is the temperature at the soldering point of the collector pin.
1
1
1
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 DC SOAR.
PARAMETER
10
PARAMETER
V CE (V)
MRC094
10
2
open emitter
open base
open collector
T
s
= 110 C; note 1
3
CONDITIONS
P
tot
= 2 W; T
CONDITIONS
s
= 110 C; note 1
65
MIN.
Product specification
20
9.5
2.5
500
500
2
+150
175
VALUE
MAX.
32
BLT81
V
V
V
mA
mA
W
C
C
UNIT
UNIT
K/W