BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 4

• Manufacturer Part Number: BLT81 T/R
• Description: RF Bipolar Power NPN 6-7.5V 500mA UHF
• Manufacturer: NXP Semiconductors

Specifications of BLT81 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT81,115

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Measured under pulsed conditions: t
1996 May 09
handbook, halfpage
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
c
re
UHF power transistor
V
CE
Fig.3
h FE
100
= 7.5 V; t
80
60
40
20
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
DC current gain as a function of collector
current; typical values.
p
200 s;
100
PARAMETER
0.02; T
200
j
= 25 C.
300
p
I C (mA)
MRC090
200 s;
400
open emitter; I
open base; I
open collector; I
V
V
V
V
CE
CE
CB
CE
= 10 V; V
= 5 V; I
= 7.5 V; I
= 7.5 V; I
0.02.
4
CONDITIONS
handbook, halfpage
C
C
I
= 300 mA; note 1;
E
C
BE
E
= 10 mA
C
= i
= i
= 0; f = 1 MHz
(pF)
E
C c
= 1 mA
Fig.4
= 0
e
= 0.1 mA
e
= 0; f = 1 MHz; T
6
4
2
0
= 0; f = 1 MHz;
0
Collector capacitance as a function of
collector-base voltage; typical values.
2
j
= 25 C.
4
20
9.5
2.5
25
MIN.
6
2.7
1.7
TYP.
Product specification
8
V CB (V)
0.1
4
3
MAX.
MRC086
BLT81
10
V
V
V
mA
pF
pF
UNIT