BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 8

• Manufacturer Part Number: BLT81 T/R
• Description: RF Bipolar Power NPN 6-7.5V 500mA UHF
• Manufacturer: NXP Semiconductors

Specifications of BLT81 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT81,115

Philips Semiconductors
1996 May 09
handbook, full pagewidth
UHF power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
strap
strap
C1
C2
C3
L1
L3
R1
C4
C5
L2
L4
C6
C7
L5
mounting
screws
140
(8x)
8
C9
L6
C8
L8
L7
R2
L9
rivets
(14x)
C10
V CC
C11
L10
C12
C13
strap
strap
MEA898
C14
Product specification
80
BLT81