BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 6

• Manufacturer Part Number: BLT81 T/R
• Description: RF Bipolar Power NPN 6-7.5V 500mA UHF
• Manufacturer: NXP Semiconductors

Specifications of BLT81 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT81,115

Philips Semiconductors
Test circuit information
1996 May 09
handbook, full pagewidth
UHF power transistor
50
input
C1
C2
C3
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
L1
R1
L2
L3
C4
C5
L4
C6
C7
L5
6
DUT
L6
C9
L7
C8
L8
R2
L9
C10
C11
L10
C12
Product specification
C14
V CC
C13
MEA899
BLT81
50
output