BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 10

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
Fig 11. Package outline SOT539B
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Earless flanged balanced LDMOST ceramic package; 4 leads
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
mm
Unit
SOT539B
Outline
version
(1)
max
nom
max
nom
min
min
H
0.185
0.165
L
4.7
4.2
A
U
A
11.81
11.56
0.465
0.455
2
b
0.007
0.004
0.18
0.10
IEC
c
31.55
30.94
1.242
1.218
D
31.52
30.96
1.241
1.219
D
1
1
3
JEDEC
All information provided in this document is subject to legal disclaimers.
0.374
0.366
9.5
9.3
E
References
0.375
0.365
9.53
9.27
E
D
U
H
1
D
5
e
Rev. 04 — 4 March 2010
1
1
1
13.72
0
0.54
e
JEITA
0.069
0.059
1.75
1.50
scale
F
2
4
b
5
17.12
16.10
0.674
0.634
H
10 mm
25.53
25.27
1.005
0.995
H
1
BLF6G22(LS)-180PN
0.137
0.117
3.48
2.97
w
L
3
D
0.089
0.079
F
2.26
2.01
Q
w
2
32.77
32.13
1.275
1.265
U
D
1
European
projection
10.29
10.03
0.405
0.395
U
Power LDMOS transistor
2
E
1
0.25
0.01
w
2
Q
© NXP B.V. 2010. All rights reserved.
0.25
0.01
w
3
c
Issue date
09-10-16
10-02-02
sot539b_po
E
SOT539B
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