BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 8

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Fig 9.
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with ε
See
Component layout for 2110 MHz and 2170 MHz test circuit
Table 9
INPUT
for list of components.
C1
C2
Table 9.
For test circuit, see
[1]
[2]
Component
C1, C3, C5
C2, C8, C16
C4, C6
C7, C14
C9
C10, C11, C15
C12
C13
R1
R2, R3
BLF6G22-180PN
C5
C3
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 180R or capacitor of same quality.
C6
C4
List of components
All information provided in this document is subject to legal disclaimers.
TB
R1
Description
ATC multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
TDK multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
electrolytic capacitor
Murata ceramic chip capacitor
ATC multilayer ceramic chip capacitor
ATC multilayer ceramic chip capacitor
chip resistor
chip resistor
Figure 8
Rev. 04 — 4 March 2010
R2
R3
and
Figure
9.
BLF6G22(LS)-180PN
C8
C10
C11
C7
BLF6G22-180PN
C14 C15
C12
r
C9
= 3.5 and thickness = 0.76 mm.
Value
10 pF
4.7 μF
220 nF
10 pF
220 μF; 63 V
100 nF
15 pF
0.3 pF
33 Ω
5.6 Ω
C16
Power LDMOS transistor
TB
OUTPUT
© NXP B.V. 2010. All rights reserved.
C13
001aah640
[1]
[2]
[2]
[1]
Remarks
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