BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 4

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
7. Application information
BLF6G22-180PN_22LS-180PN_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
G
RL
η
ACPR
Symbol Parameter
PAR
Dq
Fig 1.
D
p
in
= 1600 mA; T
O
output peak-to-average ratio P
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
DS
Application information
Application information
DS
= 32 V; I
case
All information provided in this document is subject to legal disclaimers.
= 28 V; I
DS
= 25
Dq
(dB)
= 32 V; I
G
= 1600 mA; f = 2170 MHz.
Rev. 04 — 4 March 2010
p
°
1
1
20
18
16
14
Dq
C; unless otherwise specified; in a class-AB production test circuit.
= 2112.5 MHz; f
= 2162.5 MHz; f
0
= 1600 mA; P
Dq
= 1600 mA; T
50
Conditions
at 0.01 % probability on CCDF
L(AV)
2
2
L
= 2117.5 MHz; f
= 2167.5 MHz; RF performance at V
= 180 W (CW); f = 2170 MHz.
= 115 W;
100
case
Conditions
P
P
P
P
BLF6G22(LS)-180PN
L(AV)
L(AV)
L(AV)
L(AV)
= 25
G
η
= 50 W
= 50 W
= 50 W
= 50 W
D
p
°
150
C; unless otherwise specified; in a
3
P
001aah632
= 2162.5 MHz; f
L
(W)
200
Power LDMOS transistor
60
40
20
0
Min
16.3
-
25
-
(%)
η
D
Min Typ Max Unit
4.05 4.5
Typ
−10
−35
© NXP B.V. 2010. All rights reserved.
17.5 18.7
27.5 -
4
= 2167.5 MHz;
DS
= 32 V;
Max
−6.5
−33
-
4 of 14
Unit
dB
dB
%
dBc
dB