BF1204 T/R NXP Semiconductors, BF1204 T/R Datasheet - Page 3

• Manufacturer Part Number: BF1204 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1204 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1204,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2010 Sep 16
handbook, halfpage
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
Dual N-channel dual gate MOS-FET
th j-s
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C
3
CONDITIONS





65

MIN.
VALUE
240
10
30
10
10
200
+150
150
Product specification
MAX.
BF1204
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT