BF1204 T/R NXP Semiconductors, BF1204 T/R Datasheet - Page 6

• Manufacturer Part Number: BF1204 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1204 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1204,115

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
T
Fig.7
V
R
Fig.9
j
DS
G2-S
G1
(mA)
= 25 C.
(mA)
I D
I D
= 5 V; V
connected to V
20
16
12
20
16
12
= 4 V; T
8
4
0
8
4
0
0
0
Drain current as a function of gate 1 current;
Drain current as a function of gate 1 (= V
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C.
= 4 V.
10
GG
; see Fig.19.
2
20
30
4
V GG = V DS (V)
R G1 = 68 kΩ
40
I G1 (μA)
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
82 kΩ
MCD958
MCD956
50
6
GG
)
6
handbook, halfpage
handbook, halfpage
V
R
Fig.8
V
R
Fig.10 Drain current as a function of gate 2
DS
DS
G1
G1
(mA)
(mA)
I D
I D
= 5 V; V
= 120 k (connected to V
= 5 V; T
= 120 k (connected to V
16
12
16
12
8
4
0
8
4
0
0
0
Drain current as a function of gate 1 supply
voltage (= V
voltage; typical values.
j
G2-S
= 25 C.
= 4 V; T
1
j
2
= 25 C.
GG
2
); typical values.
GG
GG
); see Fig.19.
); see Fig.19.
3
4
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
BF1204
MCD959
MCD957
5
6