BF1204 T/R NXP Semiconductors, BF1204 T/R Datasheet - Page 7

• Manufacturer Part Number: BF1204 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1204 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1204,115

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
R
Fig.11 Gate 1 current as a function of gate 2
V
f= 50 MHz; f
Fig.13 Unwanted voltage for 1% cross-modulation
(dBμV)
V unw
DS
DS
G1
(μA)
I G1
120
110
100
= 5 V; T
= 120 k (connected to V
= 5 V; V
40
30
20
10
90
80
0
0
0
voltage; typical values.
as a function of gain reduction; typical
values; see Fig.19.
unw
j
GG
= 25 C.
= 5 V; R
= 60 MHz; T
10
G1
2
= 120 k;
20
amb
GG
= 25 C.
); see Fig.19.
30
gain reduction (dB)
4
V GG = 5 V
V G2-S (V)
40
4.5 V
4 V
3.5 V
3 V
MCD960
MCD962
50
6
7
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
V
f = 50 MHz; T
Fig.12 Typical gain reduction as a function of AGC
V
f = 50 MHz; T
Fig.14 Drain current as a function of gain
DS
DS
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 5 V; V
16
12
0
8
4
0
0
0
voltage; see Fig.19.
reduction; typical values; see Fig.19.
GG
GG
amb
amb
= 5 V; R
= 5 V; R
10
= 25 C.
= 25 C.
1
G1
G1
= 120 k;
= 120 k;
20
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
BF1204
MCD961
MCD963
50
4