BF1204 T/R NXP Semiconductors, BF1204 T/R Datasheet - Page 5

• Manufacturer Part Number: BF1204 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1204 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1204,115

NXP Semiconductors
ALL GRAPHS FOR ONE MOS-FET
2010 Sep 16
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
T
V
V
T
T
Fig.5
j
j
j
DS
DS
DS
= 25 C.
= 25 C.
= 25 C.
(mA)
(μA)
I G1
Fig.3 Transfer characteristics; typical values.
I D
100
= 5 V.
= 5 V.
= 5 V.
20
16
12
80
60
40
20
8
4
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
0.5
0.8
1
V G2-S = 4 V
V G2-S = 4 V
3.5 V
3 V
1.2
1.5
3.5 V
1.6
2
V G1-S (V)
V G1-S (V)
1.5 V
1 V
2 V
3 V
2 V
1 V
2.5 V
1.5 V
2.5 V
MCD952
MCD954
2.5
2
5
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.6
G2-S
j
DS
j
(mA)
= 25 C.
(mS)
= 25 C.
y fs
I D
= 5 V.
Fig.4 Output characteristics; typical values.
24
16
40
30
20
10
= 4 V.
8
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
4
4
8
V G2-S = 4 V
12
6
V G1-S = 1.5 V
Product specification
16
8
V DS (V)
3 V
3.5 V
2 V
2.5 V
I D (mA)
BF1204
MCD953
MCD955
1.4 V
1.3 V
1.2 V
1.1 V
1 V
0.9 V
10
20