BLF573S NXP Semiconductors, BLF573S Datasheet - Page 12

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF573S_2
Product data sheet
Document ID
BLF573S_2
Modifications:
BLF573S_1
Revision history
Table 10.
Acronym
CW
EDGE
GSM
HF
LDMOS
LDMOST
RF
SMD
TTF
VHF
VSWR
Abbreviations
Release date
20090217
20081208
•
•
•
•
Table 1 on page
Section 1.2 on page
Table 7 on page
Section 8.1 on page
Description
Continuous Wave
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mount Device
Time To Failure
Very High Frequency
Voltage Standing-Wave Ratio
Rev. 02 — 17 February 2009
Data sheet status
Product data sheet
Preliminary data sheet
1: changed the value for G
3: changed the values for G
1: changed the value for G
6: changed the graphs
HF / VHF power LDMOS transistor
p
Change notice
-
p
-
p
BLF573S
© NXP B.V. 2009. All rights reserved.
Supersedes
BLF573S_1
-
12 of 14