BLF573S NXP Semiconductors, BLF573S Datasheet - Page 6

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
8. Test information
BLF573S_2
Product data sheet
Fig 4.
(dB)
G
p
30
28
26
24
22
0
V
Power gain and drain efficiency as functions of
load power; typical values
DS
= 50 V; I
8.1.1 1-Tone CW
G
D
8.1 RF Performance
p
100
Dq
= 900 mA; f = 225 MHz.
The following figures are measured in a class-AB production test circuit.
200
300
P
001aaj612
L
(W)
Rev. 02 — 17 February 2009
400
80
60
40
20
0
(%)
D
Fig 5.
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
p
30
28
26
24
22
0
V
Power gain as function of load power; typical
values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 500 mA
= 700 mA
= 900 mA
= 1100 mA
= 1300 mA
= 1500 mA
= 1700 mA
= 50 V; f = 225 MHz.
100
HF / VHF power LDMOS transistor
(7)
(6)
(5)
(1)
(2)
(3)
(4)
200
300
BLF573S
© NXP B.V. 2009. All rights reserved.
P
001aaj613
L
(W)
400
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