BLF573S NXP Semiconductors, BLF573S Datasheet - Page 5

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
BLF573S_2
Product data sheet
7.2 Reliability
Fig 3.
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
TTF (0.1 % failure fraction).
BLF573S electromigration (I
1
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
Rev. 02 — 17 February 2009
4
(1)
(7)
D
, total device)
8
(2)
(8)
(3)
(9) (10)
(4)
(11)
(5)
12
(6)
HF / VHF power LDMOS transistor
16
I
dc
BLF573S
© NXP B.V. 2009. All rights reserved.
001aaj142
(A)
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