BLF573S NXP Semiconductors, BLF573S Datasheet - Page 4
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BLF573S
Manufacturer Part Number
BLF573S
Description
RF MOSFET Power 300W, HF-500MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF573S112.pdf
(14 pages)
Specifications of BLF573S
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.09 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
42 A
Maximum Operating Temperature
+ 225 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062175112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF573S
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF573S
Manufacturer:
M/A-COM
Quantity:
5 000
NXP Semiconductors
7. Application information
BLF573S_2
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLF573S is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: V
I
Table 8.
Measured Z
f
MHz
225
Dq
Fig 1.
Fig 2.
= 900 mA; P
V
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
Definition of transistor impedance
GS
Typical impedance
S
and Z
= 0 V; f = 1 MHz.
L
= 300 W; f = 225 MHz.
L
test circuit impedances.
C
Rev. 02 — 17 February 2009
(pF)
oss
800
600
400
200
0
0
Z
0.7 + j2.0
S
10
gate
Z
S
20
001aaf059
30
Z
drain
L
HF / VHF power LDMOS transistor
40
001aaj141
V
DS
(V)
Z
1.95 + j2.0
L
50
DS
BLF573S
= 50 V;
© NXP B.V. 2009. All rights reserved.
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