BAV99S,115 NXP Semiconductors, BAV99S,115 Datasheet - Page 2

DIODE ARRAY 100V 200MA H-S SC-88

BAV99S,115

Manufacturer Part Number
BAV99S,115
Description
DIODE ARRAY 100V 200MA H-S SC-88
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BAV99S,115

Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Configuration
Double Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
- 65 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-4507-2
934056610115
BAV99S T/R
BAV99S T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV99S,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BAV99S consists of four single die high speed
switching diodes in two electrically isolated series
configurations, encapsulated in the small SMD SC-88
(SOT363) plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Solder points at pins: 2, 3, 5 and 6.
2001 May 14
Per diode
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
Small plastic SMD package
High switching speed
Two electrically isolated series configuration arrays
Low capacitance.
General purpose switching in e.g. surface mounted
circuits.
Rail to rail (ESD) protection.
RRM
R
tot
High-speed switching diode array
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
square wave; T
surge; see Fig.4
T
s
t = 1 s
t = 1 ms
t = 1 s
85 C; note 1
2
CONDITIONS
PINNING
Marking code: K1.
j
PIN
= 25 C prior to
1
2
3
4
5
6
Fig.1
Top view
6
1
5
2
Simplified outline (SC-88; SOT363)
and symbol.
anode (a1)
cathode (k2)
cathode (k3)/anode (a4)
anode (a3)
cathode (k4)
cathode (k1)/anode (a2)
4
3
MSA370
65
65
DESCRIPTION
MIN.
6
1
Product specification
85
75
200
450
4.5
1
0.5
250
+150
+150
5
2
MAX.
BAV99S
4
3
MBL211
V
V
mA
mA
A
A
A
mW
C
C
UNIT

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