BAV99S,115 NXP Semiconductors, BAV99S,115 Datasheet - Page 4

• Manufacturer Part Number: BAV99S,115
• Description: DIODE ARRAY 100V 200MA H-S SC-88
• Manufacturer: NXP Semiconductors

Specifications of BAV99S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Double Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4507-2; 934056610115; BAV99S T/R; BAV99S T/R

Philips Semiconductors
GRAPHICAL DATA
2001 May 14
handbook, halfpage
handbook, full pagewidth
High-speed switching diode array
Based on square wave currents.
T
I Fmax
Fig.2
j
(mA)
I FSM
= 25 C prior to surge.
10
(A)
250
200
150
100
50
10
0
1
1
0
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Maximum permissible continuous forward
current as a function of soldering point
temperature.
50
10
100
T s ( C)
MGW102
150
10
4
2
handbook, halfpage
Fig.3
(1) T
(2) T
(3) T
(mA)
300
200
100
I F
0
j
j
j
= 150 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
0
Forward current as a function of forward
voltage.
10
3
(1)
1
(2)
t p ( s)
V F (V)
(3)
Product specification
BAV99S
MBG382
MGW103
10
2
4