BAV99S,115 NXP Semiconductors, BAV99S,115 Datasheet - Page 5

• Manufacturer Part Number: BAV99S,115
• Description: DIODE ARRAY 100V 200MA H-S SC-88
• Manufacturer: NXP Semiconductors

Specifications of BAV99S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Double Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4507-2; 934056610115; BAV99S T/R; BAV99S T/R

Philips Semiconductors
2001 May 14
High-speed switching diode array
(nA)
I R
10
10
10
10
Fig.5
10
5
4
3
2
0
max
typ
Reverse current as a function of
junction temperature.
V
R
typ
= 75 V
75 V
25 V
100
T ( C)
j
o
MGA884
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.8
0.6
0.4
0.2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
8
Product specification
12
V R (V)
BAV99S
MBG446
16