BAV99S,115 NXP Semiconductors, BAV99S,115 Datasheet - Page 3

• Manufacturer Part Number: BAV99S,115
• Description: DIODE ARRAY 100V 200MA H-S SC-88
• Manufacturer: NXP Semiconductors

Specifications of BAV99S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Double Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4507-2; 934056610115; BAV99S T/R; BAV99S T/R

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Solder points at pins: 2, 3, 5 and 6.
2001 May 14
Per diode
V
I
C
t
V
R
SYMBOL
SYMBOL
j
R
rr
F
fr
= 25 C unless otherwise specified.
d
th j-s
High-speed switching diode array
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
see Fig.3
see Fig.5
V
when switched from I
R
when switched to I
R
L
I
I
I
I
V
V
V
F
F
F
F
= 100 ; measured at I
= 0; f = 1 MHz; see Fig.6
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 25 V; T
= 75 V; T
j
j
= 150 C
= 150 C
3
F
= 10 mA; t
CONDITIONS
F
= 10 mA to I
note 1
R
= 1 mA; see Fig.7
r
= 20 ns; see Fig.8
CONDITIONS
R
= 10 mA;
Product specification
715
855
1
1.25
1
30
50
1.5
4
1.75
VALUE
MAX.
260
BAV99S
mV
mV
V
V
pF
ns
V
A
A
A
UNIT
UNIT
K/W