IDB06S60C Infineon Technologies, IDB06S60C Datasheet - Page 2

• Manufacturer Part Number: IDB06S60C
• Description: DIODE SCHOTTKY 600V 6A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB06S60C

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 6.0 A
• Qc (typ): 15.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000411538

Rev. 2.1
1)
2)
3)
connection. PCB is vertikal with out blown air.
4)
di/dt), different from t
absence of minority carrier injection.
5)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature,
reflowsoldering @ 10sec
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
Total capacitance
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 5ms at 5mA.
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm
Only capacitive charge occuring, guaranteed by design.
t
c
is the time constant for the capacitive displacement current waveform (independent from T
4)
rr
, which is dependent on T
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
T
V
V
I
Q
t
C
R
c
sold
DC
F
thJC
thJA
c
j
, I
SMD version, device
on PCB, minimal
Footprint
SMD version, device
on PCB, 6 cm
area
reflow MSL1
I
I
I
V
V
V
di
T
V
V
V
R
F
F
LOAD
page 2
j
=6 A, T
=6 A, T
R
R
R
R
R
R
=0.08 mA
=150 °C
F
=600 V, T
=600 V, T
=400 V, I
=1 V, f =1 MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
3)
, di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
2
(one layer, 70µm thick) copper area for drain
F
j
j
≤I
=25 °C
=150 °C
2
cooling
F,max
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
280
1.5
1.7
0.7
35
15
35
35
3
-
-
-
-
-
max.
260
800
<10
IDB06S60C
2.9
1.7
2.1
62
80
j
, I
-
-
-
-
-
-
rr
LOAD
due to
Unit
K/W
°C
V
µA
nC
ns
pF
and
2009-01-07