IDB06S60C Infineon Technologies, IDB06S60C Datasheet - Page 5

• Manufacturer Part Number: IDB06S60C
• Description: DIODE SCHOTTKY 600V 6A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB06S60C

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 6.0 A
• Qc (typ): 15.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000411538

Rev. 2.1
9 Typ. C stored energy
E
C
=f(V
8
7
6
5
4
3
2
1
0
R
)
0
100
200
V
300
R
[V]
400
500
600
page 5
10 Typ. capacitance charge vs. current slope
Q
C
=f(di
20
15
10
5
0
100
F
/dt )
5)
; T
j
=150 °C; I
400
di
F
/dt [A/µs]
F
≤I
F
,max
700
IDB06S60C
2009-01-07
1000