IDB06S60C Infineon Technologies, IDB06S60C Datasheet - Page 3

• Manufacturer Part Number: IDB06S60C
• Description: DIODE SCHOTTKY 600V 6A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB06S60C

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 6.0 A
• Qc (typ): 15.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000411538

Rev. 2.1
1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
60
50
40
30
20
10
18
16
14
12
10
F
0
8
6
4
2
0
); t
C
25
0
)
p
=400 µs
j
50
1
75
-55 °C
100
T
V
C
25 °C
F
2
[°C]
[V]
125
100 °C
150 °C
150
3
175 °C
175
200
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
16
14
12
10
70
60
50
40
30
20
10
C
F
8
6
4
2
0
0
); T
); t
25
0
p
j
=400 µs; parameter T
≤175 °C
50
2
75
100 °C
150 °C
T
V
C
100
F
4
[°C]
25 °C
[V]
j
-55 °C
125
6
IDB06S60C
150
175 °C
2009-01-07
175
8