IDB06S60C Infineon Technologies, IDB06S60C Datasheet - Page 4

• Manufacturer Part Number: IDB06S60C
• Description: DIODE SCHOTTKY 600V 6A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB06S60C

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 6.0 A
• Qc (typ): 15.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000411538

Rev. 2.1
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
=f(I
10
10
30
25
20
15
10
5
0
-1
-2
1
0
10
p
0
F
)
), T
-5
0.01
0.05
0.02
single pulse
0.1
0.2
C
=100 °C, parameter: D =t
0.5
p
/T
10
0.1
-4
0.2
5
0.5
I
F(AV)
t
10
P
[s]
-3
[A]
1
10
10
p
/T
-2
10
page 4
15
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
400
300
200
100
10
10
10
10
10
R
R
0
-1
-2
-3
1
0
); T
10
)
100
-1
C
150 °C
=25 °C, f =1 MHz
j
-55 °C
200
175 °C
25 °C
10
0
100 °C
300
V
V
10
R
R
[V]
[V]
1
400
10
IDB06S60C
2
500
2009-01-07
10
600
3