IGA03N120H2 Infineon Technologies, IGA03N120H2 Datasheet
IGA03N120H2
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IGA03N120H2 Summary of contents
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... Isolation Voltage 1 J-STD-020 and JESD-022 Power Semiconductors 1 for target applications http://www.infineon.com/igbt Marking off j,max 0.15mJ G03H1202 150 C 0.15mJ G03H1202 150 C Symbol 15V jmax IGA03N120H2 G PG-TO220-3-34 (FullPAK) PG-TO220-3-31 (FullPAK) Package PG-TO-220-3-31 PG-TO-220-3-34 Value Unit 1200 -40...+150 260 2500 V Rev. 2 July 06 ...
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... Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Power Semiconductors Symbol Conditions Symbol Conditions IGA03N120H2 Max. Value Unit 4.3 K/W 64 Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.4 - 2 100 205 - 8 Rev. 2.2 July 06 ...
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... C j Symbol Conditions Energy losses include “tail” and diode t s reverse recovery. Symbol Conditions IGA03N120H2 Value Unit min. Typ. max 281 - - 0. 0. 0.29 - Value Unit min. Typ. max 340 - - 0. 0. 0.48 - Value Unit min. typ. max 0. 0.09 - Rev ...
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... V Figure 2. Safe operating area ( °C 12 5°C 150°C Figure 4. Collector current as a function of case temperature ( IGA03N120H2 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 12 5° CASE TEMPERATURE C 15V, T 150 C) j Rev. 2.2 ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors 10A Figure 6. Typical output characteristics (T = 150 -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGA03N120H2 V =15V G E 12V 10V COLLECTOR EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150° JUNCTION TEMPERATURE j Rev ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IGA03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100° ...
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... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IGA03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...
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... P Power Semiconductors 20V C iss 15V 10V C oss 5V C rss 0V 0nC 20V 30V Figure 18. Typical gate charge ( 5,2404 1,7688 0,07592 0,005018 0,000595 0,000126 0,000018 10s 8 IGA03N120H2 U =240V CE U =960V CE 10nC 20nC 30nC Q , GATE CHARGE GE Rev. 2.2 July 06 ...
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... C 0.65 D 2.95 typ. E 3.15 F 6.05 G 13.47 H 3.18 K 0.45 L 1.23 M 2.54 typ. N 4.57 P 2.57 T 2.51 9 IGA03N120H2 dimensions [mm] [inch] max min max 10.63 0.4084 0.4184 16.12 0.6245 0.6345 0.78 0.0256 0.0306 0.1160 typ. 3.25 0.124 0.128 6.56 0.2384 0.2584 13.73 0.5304 0.5404 3 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGA03N120H2 10 Rev. 2.2 July 06 ...