IGA03N120H2 Infineon Technologies, IGA03N120H2 Datasheet - Page 8

• Manufacturer Part Number: IGA03N120H2
• Description: IGBT 1200V 3A 29W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IGA03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 3A
• Power - Max: 29W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 29W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: -
• Ic(max) @ 100°: 3.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100pF
10
10
10
10
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(V
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D=t
10pF
1nF
-1
-2
1
0
GE
K/W
K/W
K/W
K/W
P
0V
= 0V, f = 1MHz)
1µs 10µs 100µs 1ms 10ms100ms 1s
/T)
V
CE
D=0.5
single pulse
,
COLLECTOR
0.01
0.02
t
0.1
P
,
10V
0.05
PULSE WIDTH
0.2
-
R
EMITTER VOLTAGE
1,4285
1,8838
0,4057
0,4234
0,3241
0,1021
0,1340
R , ( K / W )
1
C
1
=
1
/R
1
20V
C
5,2404
1,7688
0,07592
0,005018
0,000595
0,000126
0,000018
2
=
, ( s )
2
/ R
R
2
C
C
C
10s
2
oss
iss
rss
30V
8
Figure 18. Typical gate charge
(I
C
20V
15V
10V
5V
0V
= 3A)
0nC
Q
U
GE
CE
10nC
=240V
,
GATE CHARGE
IGA03N120H2
20nC
U
CE
Rev. 2.2
=960V
30nC
July 06