IGA03N120H2 Infineon Technologies, IGA03N120H2 Datasheet - Page 6

• Manufacturer Part Number: IGA03N120H2
• Description: IGBT 1200V 3A 29W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IGA03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 3A
• Power - Max: 29W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 29W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: -
• Ic(max) @ 100°: 3.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E)
CE
GE
1000ns
1000ns
100ns
100ns
10ns
10ns
= 800V, V
= +15V/0V, I
1ns
1ns
25°C
0A
T
j
I
,
C
JUNCTION TEMPERATURE
,
50°C
t
t
COLLECTOR CURRENT
GE
t
f
d(on)
t
d(off)
r
t
t
d(off)
t
d(on)
t
f
r
C
= +15V/0V, R
j
CE
= 150 C,
= 3A, R
2A
75°C
= 800V,
G
100°C
= 82 ,
G
4A
= 82 ,
125°C 150°C
6
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
CE
1000ns
5V
4V
3V
2V
1V
0V
100ns
= 0.09mA)
-50°C
10ns
= 800V, V
1ns
0
T
j
,
JUNCTION TEMPERATURE
0°C
R
t
t
GE
d(off)
d(on)
t
t
r
G
f
50
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
50°C
IGA03N120H2
100
C
100°C
Rev. 2.2
= 3A,
150
150°C
max.
min.
typ.
July 06