IGA03N120H2 Infineon Technologies, IGA03N120H2 Datasheet - Page 5

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IGA03N120H2

Manufacturer Part Number
IGA03N120H2
Description
IGBT 1200V 3A 29W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IGA03N120H2

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
3A
Power - Max
29W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
3A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
29W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
-
Ic(max) @ 100°
3.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGA03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
1 0 A
Figure 7. Typical transfer characteristics
(V
8 A
6 A
4 A
2 A
0 A
Figure 5. Typical output characteristics
(T
12A
10A
CE
8A
6A
4A
2A
0A
0 V
j
3V
= 25 C)
= 20V)
V
CE
V
V
,
GE
COLLECTOR
G E
1 V
,
T
= 1 5 V
T
1 2 V
1 0 V
j
GATE
=+25°C
j
=+150°C
5V
8 V
6 V
-
EMITTER VOLTAGE
2 V
-
EMITTER VOLTAGE
7V
3 V
9V
4 V
5 V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
10A
8A
6A
4A
2A
0A
Figure 6. Typical output characteristics
(T
GE
3V
2V
1V
0V
0V
-50°C
j
= 150 C)
= 15V)
V
CE
V
,
T
G E
COLLECTOR
1V
j
,
=15V
JUNCTION TEMPERATURE
0°C
12V
10V
8V
6V
2V
50°C
-
EMITTER VOLTAGE
IGA03N120H2
3V
100°C
Rev. 2.2
4V
I
C
I
C
150°C
=1.5A
I
C
=3A
=6A
July 06
5V

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