SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 5

• Manufacturer Part Number: SKB10N60A
• Description: IGBT NPT 600V 20A 92W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB10N60A

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 21.0 A
• Ic(max) @ 100°: 10.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB10N60AXT

Figure 7. Typical transfer characteristics
(V
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
35A
30A
25A
20A
15A
10A
5 A
0 A
Figure 5. Typical output characteristics
(T
5A
0A
CE
0 V
0V
j
= 25 C)
= 10V)
V
CE
V
V
,
G E
GE
COLLECTOR
1 V
2V
= 2 0 V
,
1 5 V
1 3 V
1 1 V
GATE
9 V
7 V
5 V
-
4V
EMITTER VOLTAGE
2 V
-
EMITTER VOLTAGE
6V
3 V
T
j
=+25°C
+150°C
8V
4 V
10V
5 V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
3 5 A
3 0 A
2 5 A
2 0 A
1 5 A
1 0 A
3 ,5 V
3 ,0 V
2 ,5 V
2 ,0 V
1 ,5 V
5 A
0 A
Figure 6. Typical output characteristics
(T
GE
0 V
j
= 150 C)
= 15V)
0 °C
V
CE
V
,
T
G E
COLLECTOR
1 V
j
,
= 2 0 V
JUNCTION TEMPERATURE
1 5 V
1 3 V
1 1 V
9 V
7 V
5 V
5 0 °C
2 V
SKB10N60A
-
EMITTER VOLTAGE
1 0 0 °C
3 V
Rev. 2.2
4 V
I
I
I
C
C
C
= 1 0 A
1 5 0 °C
= 2 0 A
= 5 A
Oct. 07
5 V