SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 9

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SKB10N60A

Manufacturer Part Number
SKB10N60A
Description
IGBT NPT 600V 20A 92W TO263-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKB10N60A

Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
92W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
21 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
21.0 A
Ic(max) @ 100°
10.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB10N60AXT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKB10N60A
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB10N60A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
500ns
400ns
300ns
200ns
100ns
2 0 A
1 6 A
1 2 A
R
R
0ns
8 A
4 A
0 A
1 0 0 A / s 3 0 0 A / s 5 0 0 A / s 7 0 0 A / s 9 0 0 A / s
= 200V, T
= 200V, T
100A / s 300A / s 500A/ s 700A / s 900A / s
d i
d i
F
F
/ d t,
/ d t,
I
j
j
F
= 125 C,
= 125 C,
= 1 0 A
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 5A
I
F
= 2 0 A
I
F
I
= 5 A
F
= 20A
I
F
= 10A
9
100 0A / s
1400nC
1200nC
1000nC
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
Dynamic test circuit in Figure E)
80 0A / s
60 0A / s
40 0A / s
20 0A / s
800nC
600nC
400nC
200nC
R
R
0A / s
0nC
= 200V, T
= 200V, T
100A / s 300A/ s 500A/ s 700A/ s 900A/ s
10 0A / s
d i
di
F
F
/ d t,
/dt,
300A / s
j
j
= 125 C,
= 125 C,
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
= 2 0A
SKB10N60A
500 A / s
I
F
= 1 0 A
I
F
= 5 A
70 0A / s
Rev. 2.2
9 00A / s
Oct. 07

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