SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 6

• Manufacturer Part Number: SKB10N60A
• Description: IGBT NPT 600V 20A 92W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB10N60A

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 21.0 A
• Ic(max) @ 100°: 10.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB10N60AXT

100ns
1 0 0 n s
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
10ns
1 0 n s
GE
= 10A, R
0 A
= 0/+15V, R
0°C
t
T
t
t
t
f
r
d(on )
d (off)
j
I
G
,
C
5 A
JUNCTION TEMPERATURE
,
= 2 5 ,
COLLECTOR CURRENT
G
50°C
j
CE
= 25 ,
= 150 C, V
1 0 A
= 400V, V
100°C
1 5 A
CE
GE
= 400V,
= 0/+15V,
2 0 A
150°C
t
t
t
t
d (o n )
r
d (o ff)
f
2 5 A
6
1 0 0 n s
5 ,5V
5 ,0V
4 ,5V
4 ,0V
3 ,5V
3 ,0V
2 ,5V
2 ,0V
1 ,5V
1 ,0V
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
1 0 n s
C
GE
= 0.3mA)
0
= 0/+15V, I
t
t
t
t
-50 °C
d (o ff)
f
d (o n )
r
T
j
,
2 0
JUNCTION TEMPERATURE
R
C
G
,
0 °C
= 10A,
j
GATE RESISTOR
= 150 C, V
SKB10N60A
4 0
5 0°C
CE
Rev. 2.2
6 0
= 400V,
100 °C
8 0
150 °C
Oct. 07
m a x.
ty p.
m in.