SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 8

• Manufacturer Part Number: SKB10N60A
• Description: IGBT NPT 600V 20A 92W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB10N60A

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 21.0 A
• Ic(max) @ 100°: 10.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB10N60AXT

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
2 5 s
2 0 s
1 5 s
1 0 s
2 5 V
2 0 V
1 5 V
1 0 V
5 s
0 s
CE
1 0 V
5 V
0 V
Figure 17. Typical gate charge
(I
0 n C
C
= 600V, start at T
= 10A)
V
GE
1 1 V
,
Q
GATE
GE
2 5 n C
,
GATE CHARGE
-
1 2 0 V
1 2 V
EMITTER VOLTAGE
j
= 25 C)
1 3 V
5 0 n C
4 8 0 V
1 4 V
7 5 n C
1 5 V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
CE
2 0 0 A
1 5 0 A
1 0 0 A
100pF
5 0 A
10pF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0 A
1 0 V
1nF
GE
600V, T
V
0V
CE
= 0V, f = 1MHz)
V
,
GE
COLLECTOR
1 2 V
,
j
GATE
= 150 C)
10V
-
1 4 V
EMITTER VOLTAGE
SKB10N60A
-
EMITTER VOLTAGE
20V
1 6 V
Rev. 2.2
1 8 V
30V
C
C
C
o ss
rss
iss
Oct. 07
2 0 V