IKA03N120H2 Infineon Technologies, IKA03N120H2 Datasheet

no-image

IKA03N120H2

Manufacturer Part Number
IKA03N120H2
Description
IGBT 1200V 8.2A 29W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IKA03N120H2

Package / Case
TO-220-3 (Straight Leads)
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
8.2A
Power - Max
29W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
8.2 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
-
Ic(max) @ 100°
8.2 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IKA03N120H2XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKA03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKA03N120H2
Quantity:
800
Part Number:
IKA03N120H2 E8153
Manufacturer:
ST
Quantity:
10 000
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Type
IKA03N120H2
IKA03N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (V
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Gate-emitter voltage
Power dissipation
T
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
2
Power Semiconductors
C
C
C
C
CE
J-STD-020 and JESD-022
= 100 C, f = 32kHz
= 25 C
= 100 C
= 25 C
Designed for:
- TV – Horizontal Line Deflection
2
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- E
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
nd
1200V, T
off
generation HighSpeed-Technology
optimized for I
j
150 C
1200V
1200V
V
CE
C
=3A
p
limited by T
3A
3A
I
C
2
GE
for target applications
= 15V)
jmax
0.15mJ
0.15mJ
E
off
150 C
150 C
T
1
http://www.infineon.com/igbt/
j
K03H1202 PG-TO-220-3-31
K03H1202 PG-TO-220-3-34
Marking
Symbol
V
I
I
-
I
V
P
T
-
V
C
C p u l s
F
j
C E
G E
t o t
i s o l
, T
s t g
PG-TO220-3-31
(FullPAK)
Package
-40...+150
IKA03N120H2
Value
1200
2500
260
8.2
9.6
3.9
29
9
9
20
Rev. 2.2
(FullPAK)
PG-TO220-3-34
G
V
A
V
W
V
Unit
C
C
E
r m s
July 06

Related parts for IKA03N120H2

IKA03N120H2 Summary of contents

Page 1

... Isolation Voltage 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking C off j 0.15mJ K03H1202 PG-TO-220-3-31 150 C 0.15mJ K03H1202 PG-TO-220-3-34 150 C Symbol V = 15V jmax IKA03N120H2 G PG-TO220-3-31 PG-TO220-3-34 (FullPAK) (FullPAK) Package Value 1200 9.6 3 -40...+150 260 2500 Rev. 2 Unit ...

Page 2

... Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Power Semiconductors Symbol Conditions Symbol Conditions IKA03N120H2 Max. Value Unit 4.3 K/W 5.8 62 Value Unit min. Typ. max. 1200 - - V - 2.2 2 1.6 - 2 100 205 - 8 Rev. 2.2 July 06 ...

Page 3

... =150 C j Symbol Conditions Energy losses include “tail” and diode t s reverse recovery IKA03N120H2 Value Unit min. typ. max 281 - - 0.23 - µ 723 - A/ s Value Unit min. typ. max 340 - - 112 - ns - 0.52 - µ ...

Page 4

... Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Power Semiconductors Symbol Conditions IKA03N120H2 Value Unit min. typ. max 0. 0.09 - Rev. 2.2 July 06 ...

Page 5

... V Figure 2. Safe operating area ( °C 12 5°C 150°C Figure 4. Collector current as a function of case temperature ( IKA03N120H2 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 12 5° CASE TEMPERATURE C 15V, T 150 C) j Rev. 2.2 ...

Page 6

... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors 10A Figure 6. Typical output characteristics (T = 150 -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IKA03N120H2 V =15V G E 12V 10V COLLECTOR EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C 150° JUNCTION TEMPERATURE j Rev ...

Page 7

... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IKA03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100° ...

Page 8

... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IKA03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...

Page 9

... K/W 0,000595 0,000126 0,000018 K 10s Figure 22. Typical Diode transient thermal impedance as a function of pulse width (D=t 9 IKA03N120H2 U =240V CE U =960V CE 10nC 20nC Q , GATE CHARGE GE D=0.5 0.2 0 0.9734 4.279 1.452 1.094 0.6213 4.899*10 0.7174 3.081*10 0.7037 4.341*10 0.05 ...

Page 10

... Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V =800V Dynamic test circuit in Figure E) 10 IKA03N120H2 T =150° =25°C J 100Ohm 200Ohm 300Ohm R , GATE RESISTANCE G =3A =150°C ...

Page 11

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 3.0V I = 2.0V 1.5V T =25°C J 1.0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IKA03N120H2 =2A =1A 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 2.2 July 06 ...

Page 12

... D 2.95 typ. E 3.15 F 6.05 G 8.28 H 3.18 K 0.45 L 1.23 M 2.54 typ. N 4.57 P 2.57 T 2.51 U 5.00 typ. 12 IKA03N120H2 dimensions [mm] [inch] max min max 10.63 0.4084 0.4184 16.12 0.6245 0.6345 0.78 0.0256 0.0306 0.1160 typ. 3.25 0.124 0.128 6.56 0.2384 0.2584 13.73 0.5304 0.5404 3 ...

Page 13

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKA03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...

Page 14

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKA03N120H2 14 Rev. 2.2 July 06 ...

Related keywords