IKA03N120H2 Infineon Technologies, IKA03N120H2 Datasheet - Page 3

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IKA03N120H2

Manufacturer Part Number
IKA03N120H2
Description
IGBT 1200V 8.2A 29W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IKA03N120H2

Package / Case
TO-220-3 (Straight Leads)
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
8.2A
Power - Max
29W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
8.2 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
-
Ic(max) @ 100°
8.2 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IKA03N120H2XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKA03N120H2
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKA03N120H2
Quantity:
800
Part Number:
IKA03N120H2 E8153
Manufacturer:
ST
Quantity:
10 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
2)
3)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
t
t
t
t
E
E
E
t
Q
I
d i
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
F
F
/ d t
/ d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
R
j
j
j
j
C C
G E
R
C C
G E
R
G
G
G
G
=2 5 C ,
=2 5 C ,
=1 5 0 C
=1 5 0 C
2 )
2 )
2 )
= 8 00 V , I
2 )
= 8 00 V , I
= 82 ,
= 82
= 82 ,
= 82
3
= 80 0 V, I
= 0V / 15 V ,
= 80 0 V, I
= 0V / 15 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
= 3 A,
= 3 A,
C
= 3 A,
3)
3)
=3 A ,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKA03N120H2
Value
Value
0.14
0.15
0.29
0.23
0.22
0.26
0.48
0.52
typ.
typ.
281
723
340
112
661
9.2
5.2
9.3
9.4
6.7
29
52
63
11
Rev. 2.2
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
July 06
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s

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