IKA03N120H2 Infineon Technologies, IKA03N120H2 Datasheet - Page 11

• Manufacturer Part Number: IKA03N120H2
• Description: IGBT 1200V 8.2A 29W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKA03N120H2

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 8.2A
• Power - Max: 29W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 8.2 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: -
• Ic(max) @ 100°: 8.2 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IKA03N120H2XK

Power Semiconductors
4A
2A
0A
0V
Figure 27. Typical diode forward current
as a function of forward voltage
V
F
,
1V
FORWARD VOLTAGE
T
J
=150°C
2V
T
J
=25°C
3V
11
3.0V
2.5V
2.0V
1.5V
1.0V
Figure 28. Typical diode forward
voltage as a function of junction
temperature
I
I
I
F
-50°C
F
F
=4A
=2A
=1A
T
J
,
JUNCTION TEMPERATURE
0°C
50°C
IKA03N120H2
100°C
Rev. 2.2
150°C
July 06