IKW08T120 Infineon Technologies, IKW08T120 Datasheet

IGBT 1200V 16A 70W TO247-3

IKW08T120

Manufacturer Part Number
IKW08T120
Description
IGBT 1200V 16A 70W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW08T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 8A
Current - Collector (ic) (max)
16A
Power - Max
70W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
16A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
70W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
70W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
16.0 A
Ic(max) @ 100°
8.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW08T120
Manufacturer:
NEC
Quantity:
30 000
Part Number:
IKW08T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IKW08T120
0
Company:
Part Number:
IKW08T120
Quantity:
4 500
Company:
Part Number:
IKW08T120
Quantity:
30
Part Number:
IKW08T120 K08T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Low Loss DuoPack : IGBT in TrenchStop
Type
IKW08T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
1
2)
Power Semiconductors
C
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
Approx. 1.0V reduced V
Short circuit withstand time – 10 s
Designed for :
TrenchStop
offers :
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 15V, V
1200V, T
and 0.5V reduced V
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CC
j
®
1200V
1200V, T
150 C
and Fieldstop technology for 1200 V applications
V
CE
p
limited by T
p
j
limited by T
2)
8A
CE(sat)
F
I
C
with soft, fast recovery anti-parallel EmCon HE diode
compared to BUP305D
150 C
V
1
CE(sat),Tj=25°C
for target applications
jmax
1.7V
jmax
CE(sat)
TrenchStop
150 C
1
T
j,max
http://www.infineon.com/igbt/
®
Marking Code
and Fieldstop technology
®
K08T120
Series
Symbol
V
I
I
-
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
S C
j
s t g
C E
G E
t o t
PG-TO-247-3-21
Package
-40...+150
-55...+150
IKW08T120
Value
1200
16
24
24
16
24
10
70
8
8
20
Rev. 2.2 Dec 07
PG-TO-247-3-21
G
V
A
V
W
Unit
C
s
C
E

Related parts for IKW08T120

IKW08T120 Summary of contents

Page 1

... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors ® TrenchStop Series ® and Fieldstop technology CE(sat) 1 for target applications http://www.infineon.com/igbt Marking Code CE(sat),Tj=25°C j,max 1.7V K08T120 150 C Symbol jmax jmax IKW08T120 PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 -40...+150 C -55...+150 Rev. 2.2 Dec 07 ...

Page 2

... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors ® TrenchStop Series - 2 IKW08T120 260 Rev. 2.2 Dec 07 ...

Page 3

... Transconductance Integrated gate resistor Power Semiconductors ® TrenchStop Series Symbol Conditions Symbol Conditions . IKW08T120 Max. Value Unit 1.7 K/W 2.3 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.7 2 1.7 - 5.0 5 100 none Ω Rev. 2.2 Dec 07 ...

Page 4

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series = Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW08T120 - 600 - Value Unit min. typ. max 450 - - 1.0 - µ 420 - A/ s Rev. 2.2 Dec 07 ...

Page 5

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW08T120 Value Unit min. typ. max 570 - - 140 - - 200 - ns - 2.3 - µ 320 - A/ s Rev. 2.2 Dec 07 ...

Page 6

... Power Semiconductors ® TrenchStop Series 10A 1A 0,1A 0,01A 10kHz 100kHz 1V Figure 2. Safe operating area = 600V 15A 10A 5A 0A 25°C 125°C Figure 4. Collector current as a function of 6 IKW08T120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° CASE TEMPERATURE ...

Page 7

... Power Semiconductors ® TrenchStop Series 20A V 15A 10A Figure 6. Typical output characteristic 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 8V 10V 12V -50°C Figure 8. Typical collector-emitter 7 IKW08T120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150°C) j 0°C 50°C 100° JUNCTION TEMPERATURE ...

Page 8

... TrenchStop Series 100 15A Figure 10. Typical switching times as a =81Ω 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as =600V, =81Ω IKW08T120 t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =8A Dynamic test circuit in Figure E) 0°C 50° ...

Page 9

... 1mJ off E on 0mJ 100°C 125°C 400V V Figure 16. Typical switching energy losses =600V, =81Ω IKW08T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =8A Dynamic test circuit in Figure E) ...

Page 10

... V CE Figure 18. Typical capacitance as a function 75A 50A 25A 0A 16V 12V V Figure 20. Typical short circuit collector = 25° IKW08T120 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage ( V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 11

... Figure 22. Typical turn off behavior = 150 K 1.73*10 -2 2.75*10 -3 2.57*10 -4 2.71* K K/W 10ms 100ms 10µs Figure 24. Diode transient thermal 11 IKW08T120 0.5us 1us 1.5us t , TIME (V =15/0V, R =81Ω 150 Dynamic test circuit in Figure E) D=0 0.2 0.552 7.23*10 0.732 8.13*10 0.1 0.671 1.09*10 0.344 1.55*10 0. 0.02 0. ...

Page 12

... F Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V =600V Dynamic test circuit in Figure E) 12 IKW08T120 T =150° =25°C J 400A/µs 600A/µs 800A/µs DIODE CURRENT SLOPE =8A =25°C ...

Page 13

... Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series 2,0V I =15A F 8A 1,5V 5A 2,5A 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 13 IKW08T120 0°C 50°C 100°C , JUNCTION TEMPERATURE J Rev. 2.2 Dec 07 ...

Page 14

... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 14 IKW08T120 Rev. 2.2 Dec 07 ...

Page 15

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 15 IKW08T120 =180nH =39pF. Rev. 2.2 Dec 07 ...

Page 16

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 16 IKW08T120 Rev. 2.2 Dec 07 ...

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