IKW08T120 Infineon Technologies, IKW08T120 Datasheet - Page 11

• Manufacturer Part Number: IKW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 70W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
10
0V
-1
-2
0
K/W
K/W
K/W
0us
V
I
10µs
C
CE
D=0.5
0.05
0.2
0.1
(V
Dynamic test circuit in Figure E)
( D = t
0.5us
GE
100µs
0.02
0.01
single pulse
=0/15V, R
t
p
P
,
/ T )
PULSE WIDTH
t ,
1ms
TIME
1us
R
0.187
0.575
0.589
0.350
G
R , ( K / W )
1
=81Ω, T
C
1
=
10ms
1
/R
1
1.5us
j
C
= 150 C,
1.73*10
2.75*10
2.57*10
2.71*10
2
100ms
=
, ( s )
2
/R
TrenchStop
R
2
-1
-2
-3
-4
2
11
30A
20A
10A
0A
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
30A
20A
10A
0A
10
10
10
®
0us
-1
-2
V
0
I
Series
K/W
K/W
K/W
C
CE
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
( D = t
0.2
0.1
0.5us
GE
P
=15/0V, R
100µs
0.01
single pulse
0.02
/ T )
t
P
,
PULSE WIDTH
t ,
1us
TIME
1ms
IKW08T120
G
=81Ω, T
R
0.552
0.732
0.671
0.344
R , ( K / W )
1
C
1
=
10ms
1.5us
1
Rev. 2.2 Dec 07
/R
j
1
= 150 C,
C
7.23*10
8.13*10
1.09*10
1.55*10
2
100ms
=
, ( s )
2
/R
R
2
600V
400V
200V
0V
-2
-3
-3
-4
2