IKW08T120 Infineon Technologies, IKW08T120 Datasheet - Page 10

• Manufacturer Part Number: IKW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 70W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
15V
10V
15µs
10µs
Figure 17. Typical gate charge
Figure 19. Short circuit withstand time as a
5V
0V
5µs
0µs
0nC
12V
V
( I
function of gate-emitter voltage
( V
GE
C
CE
=8 A)
,
GATE
Q
=600V , start at T
GE
240V
25nC
,
-
GATE CHARGE
EMITTETR VOLTAGE
14V
J
960V
= 25°C )
50nC
16V
TrenchStop
10
Figure 18. Typical capacitance as a function
Figure 20. Typical short circuit collector
100pF
75A
50A
25A
®
10pF
0A
1nF
Series
12V
0V
V
CE
V
of collector-emitter voltage
( V
current as a function of gate-
emitter voltage
( V
,
GE
COLLECTOR
GE
CE
,
GATE
=0V, f = 1 MHz)
14V
600V, T
-
EMITTETR VOLTAGE
10V
-
EMITTER VOLTAGE
IKW08T120
j
16V
150 C)
Rev. 2.2 Dec 07
20V
18V
C
C
C
oss
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iss