SI5511DC-T1-E3 Vishay, SI5511DC-T1-E3 Datasheet - Page 12

• Manufacturer Part Number: SI5511DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5511DC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 2.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 2.1W, 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A @ N Channel or 2.3 A @ P Channel
• Power Dissipation: 2100 mW @ N Channel or 1300 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5511DC-T1-E3TR

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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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