SI5511DC-T1-E3 Vishay, SI5511DC-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI5511DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5511DC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 2.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 2.1W, 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A @ N Channel or 2.3 A @ P Channel
• Power Dissipation: 2100 mW @ N Channel or 1300 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5511DC-T1-E3TR

Si5511DC
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
DS
V
V
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 15 V, V
= - 15 V, V
= - 30 V, V
V
V
= 15 V, V
V
= - 15 V, V
V
V
= 30 V, V
V
V
V
= 15 V, V
V
= 15 V, V
V
V
DS
V
GS
V
DS
V
V
DS
GS
DS
DS
GS
DS
GS
DS
GS
GS
DS
DS
≤ - 5 V, V
= V
= - 4.5 V, I
= - 15 V, I
= 0 V, V
= 0 V, I
= V
= - 2.5 V, I
= - 30 V, V
= 0 V, I
≤ 5 V, V
= 4.5 V, I
= 2.5 V, I
I
I
= 30 V, V
= 15 V, I
D
D
I
I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
D
= 4.5 V, I
= - 5 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
= 5 V, I
D
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
= - 250 µA
D
D
= 250 µA
D
D
D
= 250 µA
GS
D
GS
= ± 12 V
= 4.8 A
= - 2.3 A
= 4.5 V
= - 4.5 V
= 4.8 A
= - 2.3 A
= 3.8 A
= 1.8 A
= 0 V
= 0 V
D
J
D
D
J
= 55 °C
D
= 4.8 A
= 55 °C
= - 3.2 A
= 4.8 A
= - 3.2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.7
- 30
- 10
0.7
30
15
S10-0547-Rev. C, 08-Mar-10
Document Number: 73787
- 23.1
Typ.
0.045
0.125
0.075
0.213
24.2
10.8
6.56
1.85
435
260
3.6
2.3
4.7
4.1
4.2
3.8
1.1
0.6
0.9
2.7
7.7
65
55
30
42
a
0.055
0.150
0.090
0.256
Max.
- 100
100
- 10
7.1
6.2
6.3
4.6
- 2
- 1
10
2
1
mV/°C
Unit
µA
nC
nA
pF
V
V
A
Ω
S
Ω