SI5511DC-T1-E3 Vishay, SI5511DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5511DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5511DC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 2.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 2.1W, 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A @ N Channel or 2.3 A @ P Channel
• Power Dissipation: 2100 mW @ N Channel or 1300 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5511DC-T1-E3TR

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
V
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
SD
S
rr
a
b
r
f
rr
I
I
I
F
F
D
= - 1.5 A, dI/dt = - 100 A/µs, T
I
= 2.4 A, dI/dt = 100 A/µs, T
D
≅ - 1.86 A, V
≅ 3.8 A, V
V
V
DD
I
DD
S
I
S
= - 1.5 A, V
= - 15 V, R
= 2.4 A, V
= 15 V, R
T
N-Channel
P-Channel
N-Channel
P-Channel
GEN
Test Conditions
C
GEN
= 25 °C
= 4.5 V, R
= - 4.5 V, R
L
GS
L
GS
= 3.95 Ω
= 18.1 Ω
= 0 V
= 0 V
g
J
J
= 1 Ω
= 25 °C
g
= 25 °C
= 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Vishay Siliconix
Typ.
- 0.8
11.6
19.8
17.5
17.2
0.8
6.1
8.4
3.2
2.6
15
45
78
48
33
28
65
9
Si5511DC
a
www.vishay.com
Max.
- 2.6
- 1.2
117
- 10
2.6
1.2
9.2
12
23
68
72
50
42
98
15
18
30
27
Unit
nC
ns
ns
ns
A
V
3