SI5511DC-T1-E3 Vishay, SI5511DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5511DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5511DC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 2.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 2.1W, 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A @ N Channel or 2.3 A @ P Channel
• Power Dissipation: 2100 mW @ N Channel or 1300 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5511DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
0.001
1.5
1.3
1.1
0.9
0.7
0.5
0.01
0.1
10
- 50
20
0.0
1
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
D
SD
T
0
A
= 250 µA
Threshold Voltage
= 150 °C
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
50
0.6
75
T
A
0.001
0.01
= 25 °C
0.8
100
0.1
10
1
100
0.1
* V
Limited by R
Safe Operating Area, Junction-to-Ambient
1.0
GS
125
Single Pulse
T
A
= 25 °C
V
minimum V
150
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS Limited
10
DS(on)
50
40
30
20
10
0.12
0.10
0.08
0.06
0.04
0.02
0
10
is specified
-4
1
1 s
1 ms
10 ms
100 ms
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
10
-3
100
V
10
GS
2
-2
Single Pulse Power
- Gate-to-Source Voltage (V)
T
10
A
= 25 °C
Time (s)
-1
Vishay Siliconix
3
1
Si5511DC
T
A
= 125 °C
www.vishay.com
10
4
I
D
100
= 4.8 A
600
5
5