SI5504DC-T1-E3 Vishay, SI5504DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5504DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5504DC-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5504DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
0.20
0.15
0.10
0.05
0.00
10
10
V
8
6
4
2
0
8
6
4
2
0
GS
0.0
0
0
= 10 V thru 5 V
V
I
D
DS
V
= 2.9 A
GS
0.5
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
1
V
2
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
1.0
I
D
- Drain Current (A)
Gate Charge
2
4
1.5
3
6
2.0
V
GS
4 V
3 V
= 10 V
4
8
2.5
3.0
5
10
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 2.9 A
1
6
= 10 V
V
V
DS
GS
Transfer Characteristics
0
T
C
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
iss
25
Capacitance
12
T
2
C
25 °C
= - 125 °C
50
Vishay Siliconix
18
3
75
Si5504DC
- 55 °C
www.vishay.com
100
24
4
125
150
30
5
3