SI5504DC-T1-E3 Vishay, SI5504DC-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI5504DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5504DC-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5504DC-T1-E3TR

Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.6
0.4
0.2
0.0
10
0.1
10
8
6
4
2
0
- 50
0
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.1 A
1
= 15 V
0.3
V
0
SD
I
Q
D
g
Threshold Voltage
= 250
T
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
2
T
J
J
25
- Temperature (°C)
Gate Charge
= 150 °C
0.6
µA
50
3
0.9
75
4
T
100
J
= 25 °C
1.2
5
125
150
1.5
6
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
- 50
10
0
-4
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
10
V
I
D
GS
-3
= 2.1 A
2
V
= 10 V
GS
0
T
10
J
- Gate-to-Source Voltage (V)
Single Pulse Power
- Junction Temperature (°C)
-2
25
4
10
Time (s)
-1
S10-0547-Rev. C, 08-Mar-10
50
Document Number: 71056
I
D
= 2.1 A
1
6
75
10
100
8
125
100
10
600
150