SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet
SI5504DC-T1
Specifications of SI5504DC-T1
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SI5504DC-T1 Summary of contents
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... Marking Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a ...
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... Si5504DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71056 S10-0547-Rev. C, 08-Mar- 2.0 2.5 3 Si5504DC Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 400 300 ...
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... Si5504DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...
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... On-Resistance vs. Drain Current Document Number: 71056 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2.0 2.5 3 Si5504DC Vishay Siliconix - ° ° Gate-to-Source Voltage (V) ...
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... Si5504DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 250 µA D 0.0 - 0 ...
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... Document Number: 71056 S10-0547-Rev. C, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5504DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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ChipFETR NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is ...
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... DIP, which will allow test sockets to be used to assist in testing. The thermal performance of the 1206-8 on this board has been MOSFETs, measured with the results following on the next page. The testing included comparison with the minimum recommended ...
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AN812 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 30_C/W typical, 40_C/W maximum for the dual device. The “foot” is the drain ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...