SI5504DC-T1-E3 Vishay, SI5504DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5504DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5504DC-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.085 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5504DC-T1-E3TR

Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
10
0.01
1
0.1
- 50
0
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
Single Pulse
SD
0
D
= 250
- Source-to-Drain Voltage (V)
0.4
T
Threshold Voltage
J
10
25
- Temperature (°C)
T
µA
-3
J
= 150 °C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
-2
T
J
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
0.20
0.15
0.10
0.05
0.00
1
50
40
30
20
10
0
10
0
-4
On-Resistance vs. Gate-to-Source Voltage
10
-3
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
10
Notes:
P
Single Pulse Power
-2
DM
- Gate-to-Source Voltage (V)
JM
- T
10
A
4
t
1
= P
-1
Time (s)
S10-0547-Rev. C, 08-Mar-10
t
2
DM
I
D
Document Number: 71056
Z
= 2.9 A
thJA
thJA
1
100
6
t
t
(t)
1
2
= 90 °C/W
10
8
100
600
600
10