PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 10
PMGD8000LN,115
Manufacturer Part Number
PMGD8000LN,115
Description
MOSFET N-CH TRENCH DL 30V SOT363
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMGD8000LN115.pdf
(12 pages)
Specifications of PMGD8000LN,115
Package / Case
SC-70-6, SC-88, SOT-363
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
125mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
350pC @ 4.5V
Input Capacitance (ciss) @ Vds
18.5pF @ 5V
Power - Max
200mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
0.125 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2370-2
934057621115
PMGD8000LN T/R
934057621115
PMGD8000LN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMGD8000LN,115
Manufacturer:
ATMEL
Quantity:
3 400
Philips Semiconductors
10. Revision history
Table 6:
9397 750 10939
Product data
Rev Date
01
20030227
Revision history
CPCN
-
Description
Product data (9397 750 10939)
Rev. 01 — 27 February 2003
Dual TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMGD8000LN
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