PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 8

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
9397 750 10939
Product data
Fig 12. Source (diode forward) current as a function of
(A)
I S
T
0.25
0.15
0.05
j
0.2
0.1
= 25 C and 150 C; V
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.2
0.4
GS
150 C
= 0 V
0.6
0.8
T j = 25 C
V SD (V)
03ah17
Rev. 01 — 27 February 2003
1
Fig 13. Gate-source voltage as a function of gate
V GS
I
D
(V)
= 100 mA; V
5
4
3
2
1
0
charge; typical values.
0
I D = 100 mA
V DD = 10 V
T j = 25 C
DD
Dual TrenchMOS™ logic level FET
100
= 10 V
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMGD8000LN
200
300
Q G (pC)
03ah19
400
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